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Award Abstract #0103022
NER: Exploring A Novel Plasma-Based Copper Nano-Line Etch Method for Nano-Devices And Circuits
| NSF Org: |
ECCS
Division of Electrical, Communications and Cyber Systems
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| Initial Amendment Date: |
July 10, 2001 |
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| Latest Amendment Date: |
July 10, 2001 |
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| Award Number: |
0103022 |
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| Award Instrument: |
Standard Grant |
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| Program Manager: |
Usha Varshney
ECCS Division of Electrical, Communications and Cyber Systems
ENG Directorate for Engineering
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| Start Date: |
July 1, 2001 |
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| Expires: |
September 30, 2002 (Estimated) |
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| Awarded Amount to Date: |
$81161 |
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| Investigator(s): |
Yue Kuo yuekuo@tamu.edu (Principal Investigator)
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| Sponsor: |
Texas Engineering Experiment Station
TEES State Headquarters Bldg.
College Station, TX 77843 979/862-1696
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| NSF Program(s): |
INFORMATION TECHNOLOGY RESEARC,
ELECT, PHOTONICS, & DEVICE TEC
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| Field Application(s): |
0206000 Telecommunications
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| Program Reference Code(s): |
OTHR, 1676, 0000
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| Program Element Code(s): |
1640, 1517
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ABSTRACT
0103022
Kuo
This proposal was received in response to NSE, NSF-0019. The goal of this proposal is to explore a novel method for etching copper nano-lines at room temperature, which is crucial for the fabrication of future nano-devices and circuits. The PI plans to study the key step in the process, i.e., a unique anisotropic plasma-copper reaction, in the nano-scale region.
This is an experimental research project. The PI is going to investigate a number of issues in the nano-line definition process, such as the critical dimension control, profile, sidewall surface, and residue formation, through fundamental studies of plasma-copper surface reaction, solid-state reactant transport and copper-halide reactions. This research involves the microstructure of the copper material, plasma chemistry, and directional solid-state reaction mechanisms. In addition to plasma process characterization, he will make extensive use of Transmission Electron Microscopy (TFM) as well as other thin-film analytical methods to probe the plasma-copper reaction phenomenon at the nano-scale.
The plasma reaction will he carried out in the principal investigator's (P1's) Thin Film Microelectronic Research Laboratory. All experiments will employ a simple parallel-plate reactive ion etching reactor with a 13.56 MHz RF generator. The nano-line pattern, e.g., sub-100 nm, will be prepared in the NSF National Nanofabrication Users Network (NNUN) facility located in the Pennsylvania State University using c-beam lithography. The industry sponsor AMD agrees to support this project by supplying thin film characterization service, technical consulting, and 6-inch wafers.
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