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Award Abstract #0103082
NIRT: Phonon Transport in Nanostructures with Application to Ultrathin Silicon-on-Insulator (SOI) Transistors
| NSF Org: |
CBET
Division of Chemical, Bioengineering, Environmental, and Transport Systems
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| Initial Amendment Date: |
August 10, 2001 |
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| Latest Amendment Date: |
August 11, 2005 |
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| Award Number: |
0103082 |
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| Award Instrument: |
Standard Grant |
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| Program Manager: |
Patrick E. Phelan
CBET Division of Chemical, Bioengineering, Environmental, and Transport Systems
ENG Directorate for Engineering
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| Start Date: |
August 15, 2001 |
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| Expires: |
January 31, 2006 (Estimated) |
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| Awarded Amount to Date: |
$1304891 |
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| Investigator(s): |
Mehdi Asheghi masheghi@stanford.edu (Principal Investigator)
Myung Jhon (Co-Principal Investigator)
Cristina Amon (Co-Principal Investigator)
Gary Fedder (Co-Principal Investigator)
Jayathi Murthy (Co-Principal Investigator)
Ghavam Shahidi (Co-Principal Investigator)
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| Sponsor: |
Carnegie-Mellon University
5000 Forbes Avenue
PITTSBURGH, PA 15213 412/268-8746
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| NSF Program(s): |
ELECTRONIC/PHOTONIC MATERIALS,
ELECT, PHOTONICS, & DEVICE TEC,
GRANT OPP FOR ACAD LIA W/INDUS,
THERMAL TRANSPORT PROCESSES
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| Field Application(s): |
0308000 Industrial Technology
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| Program Reference Code(s): |
OTHR, 9251, 1674, 0000
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| Program Element Code(s): |
1775, 1517, 1504, 1406
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ABSTRACT
Proposal Number: 0103082
Principal Investigator: Mehdi Asheghi
Abstract
This proposal was received in response to NSE, NSF-0019. The project is focused on the study of two major nanoscale phenomena: (a) phonon transport in single crystal silicon layer of thickness in the range of 10-50 nm and (b) ballistic phonon transport near hotspots ( appr. 10 nm) in the active region of silicon-on-insulator (SOI) transistors. The experimental part of the study involves the very first measurements of thermal conductivity of nanometer size, single crystal silicon layer and ballistic phonon transport near a hotspot in a transistor. Transient and steady state heat transfer experiments on nanostructures at both room and cryogenic temperatures will be performed to reveal the fundamentals of phonon transport at nanometer scales. The theoretical effort focuses on numerical simulations of phonon Boltzmann transport equation (BTE) in the relaxation time approximation, accounting for phonon dispersion as well as frequency dependent phonon mean free paths in silicon. The analytical work will take advantage of the experimental data and numerical simulations to introduce simple, yet physically realistic, expressions for phonon transport in nanostructures, which can be used for rapid electrical/thermal simulation.
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