Award Abstract #0210449
NIRT: Epitaxial Magnetic Oxide Structures for Nanoscale Spin Devices

NSF Org:	ECCS Division of Electrical, Communications and Cyber Systems
Initial Amendment Date:	September 20, 2002
Latest Amendment Date:	May 16, 2007
Award Number:	0210449
Award Instrument:	Continuing grant
Program Manager:	Pradeep P. Fulay ECCS Division of Electrical, Communications and Cyber Systems ENG Directorate for Engineering
Start Date:	October 1, 2002
Expires:	September 30, 2007 (Estimated)
Awarded Amount to Date:	$1577000
Investigator(s):	Chang-Beom Eom eom@engr.wisc.edu (Principal Investigator) Venkat Chandrasekhar (Co-Principal Investigator) Mark Rzchowski (Co-Principal Investigator) Daniel van der Weide (Co-Principal Investigator) Xiaoqing Pan (Co-Principal Investigator)
Sponsor:	University of Wisconsin-Madison 21 North Park Street MADISON, WI 53715 608/262-3822
NSF Program(s):	ELECTRONIC/PHOTONIC MATERIALS, ELECT, PHOTONICS, & DEVICE TEC, GRANT OPP FOR ACAD LIA W/INDUS
Field Application(s):	0206000 Telecommunications
Program Reference Code(s):	OTHR, MANU, 9251, 9231, 9162, 9147, 9102, 7237, 1674, 1589, 1504, 107E, 0000
Program Element Code(s):	1775, 1517, 1504

ABSTRACT

0210449

Eom

This proposal was received in response to the Nanoscale Science and Engineering Initiative, Program Solicitation NSF 01-157, in the NIRT category. The proposal focuses on understanding intrinsic phenomena governing spin transport at the nanoscale, and the development of new methods for its manipulation for future spin-controlled, magneto-electronic, devices. It addresses one of the most exciting aspects of current research on next-generation electronic devices: the manipulation of spin, rather than only electrical charge. The advantages of these magnetoelectronic devices include nonvolatility, faster switching in static memory elements, and higher density due to a simpler device structure. These issues become even more important as technology drives device sizes toward the nanoscale, where new fundamental physical effects emerge that alter spin transport, as well as high-frequency dynamics and switching times.

An understanding of these issues at the nanoscale requires single-crystal magnetic heterostructures with atomically-sharp interfaces, patterned to nanometer dimensions. This proposal probes nanoscale spin transport phenomena in epitaxial magnetic oxide nanostructures grown with atomic-layer control, whose magnetic, electronic, and interfacial properties are tuned at will. Layers with defined electronic, magnetic, and morphological characteristics positioned with atomic-layer control in epitaxial systems are used to address crucial fundamental questions in magnetic nanostructures.

This research program consists of 1) design, growth, and characterization of epitaxial magnetic oxide heterostructures with atomic layer control by pulsed laser deposition with in-situ real-time structural analysis 2) high-resolution and analytical TEM to determine atomic structure and electronic properties of the interfaces; 3) nanoscale patterning of novel magnetic heterostructures below 50 nm; 4) scanning probe measurements of topography and local electronic properties; 5) education and outreach efforts with a focus on introducing young people to modern, multidisciplinary science and technology, using the research direction as a vehicle.

The multidisciplinary, multiuniversity/industry team consists of members working in Materials Science, Physics, Electrical Engineering, and device development. Research, education, and outreach all follow the theme of nanoscale structures, novel phenomena, and spin transport control. This work will build a scientific foundation for the understanding of new phenomena in nanoscale spin-controlled devices. The PIs industrial and multidisciplinary interactions will be very beneficial in advancing research as well as in educating students. This study will also provide fundamental guidelines in the atomic-scale control of nanoscale systems such as ferroelectrics and oxide-semiconductor integration that are important for next-generation technology.

PUBLICATIONS PRODUCED AS A RESULT OF THIS RESEARCH

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