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Award Abstract #1229635

MRI: Acquisition of A Dual-Beam Focus Ion-Beam (FIB) System for Nanotechnology Biomedical and Energy Research

NSF Org: ECCS
Div Of Electrical, Commun & Cyber Sys
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Initial Amendment Date: September 6, 2012
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Latest Amendment Date: September 6, 2012
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Award Number: 1229635
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Award Instrument: Standard Grant
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Program Manager: Eyad Abed
ECCS Div Of Electrical, Commun & Cyber Sys
ENG Directorate For Engineering
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Start Date: September 15, 2012
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End Date: August 31, 2015 (Estimated)
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Awarded Amount to Date: $750,000.00
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Investigator(s): Mark Ming-Cheng Cheng mcheng@wayne.edu (Principal Investigator)
Zhixian Zhou (Co-Principal Investigator)
Peter Hoffmann (Co-Principal Investigator)
Amar Basu (Co-Principal Investigator)
Yong Xu (Co-Principal Investigator)
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Sponsor: Wayne State University
5057 Woodward
Detroit, MI 48202-3622 (313)577-2424
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NSF Program(s): MAJOR RESEARCH INSTRUMENTATION
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Program Reference Code(s): 097E, 100E, 1189
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Program Element Code(s): 1189

ABSTRACT

The objective of this research is acquisition of a dual beam focus ion beam (FIB) system, which will permit synergistic opportunities for nanotechnology, biomedical and energy research at Wayne State University (WSU). The approach is to use the FIB system as a central tool for several current and future projects, which urgently demand the ability to fabricate novel three-dimensional nanostructures and nanodevices in situ. This is a capability uniquely offered by FIB.

Intellect Merit: The sub-100 nm resolution three-dimensional patterning capabilities of FIB through milling/deposition will facilitate many research projects that require custom fabricated complex nanostructures and nanosystems. Consequently, FIB will significantly improve the quality and creativity of research at WSU in a broad range of areas from the development of devices and instrumentation (AFM, NSOM, scanning probe) to biomedical applications (biophysics, DNA sequencing, nanofluidics, single cell analysis, imaging, biosensor) to energy research (characterization of battery materials, catalyst and nanomaterials).

Broader Impact: The success of this proposal will significantly enhance WSU capabilities for nanofabrication and material characterization. FIB will be available to the entire WSU campus, other universities and local industry. Together, we estimate that this proposed FIB will impact more than 100 users from 20 research groups. For local industry, it will serve as a resource for advanced manufacturing, product prototyping and material characterization. This proposal represents a unique opportunity for training under-represented groups, which comprise 41% of WSU?s enrollment. The PIs will integrate FIB in their on-going projects and FIB in training of students.


PUBLICATIONS PRODUCED AS A RESULT OF THIS RESEARCH

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Jinho Yang, Rhet C. de Guzman, Steven O. Salley, K.Y. Simon Ng, Bing-Hung Chen, Mark Ming-Cheng Cheng. "Plasma enhanced chemical vapor deposition silicon nitride for a high-performance lithium ion battery anode," Journal of Power Sources, v.269, 2014, p. 520. 

Hsun-Jen Chuang, Xuebin Tan, Nirmal Jeevi, Ghimire, Meeghage Madusanka Perera, Bhim Chamlagain, Mark Ming-Cheng Cheng,Jiaqiang Yan, David Mandrus, DavidToma?ek, and Zhixian Zhou. "High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts," ACS Nano Letters, v.14, 2014, p. 3594. 

Jing Yang, Xuebin Tan, Wei-Chuan Shih, Mark Ming-Cheng Cheng. "A sandwich substrate for ultrasensitive and label-free SERS spectroscopic detection of folic acid/methotrexate," Biomedical microdevices, v.16, 2014. 

Jinho Yang, Rhet C de Guzman, Steven O Salley, KY Simon Ng, Bing-Hung Chen, Mark Ming-Cheng Cheng. "Plasma enhanced chemical vapor deposition silicon nitride for a high-performance lithium ion battery anode," Journal of Power Sources, v.269, 2014, p. 520. 

Hsun-Jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire, Meeghage Madusanka Perera, Bhim Chamlagain, Mark Ming-Cheng Cheng, Jiaqiang Yan, David Mandrus, David Tománek, Zhixian Zhou. "High mobility wse2 p-and n-type field-effect transistors contacted by highly doped graphene for low-resistance contacts," Nano letters, v.14, 2014, p. 3594. 

 

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