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Low-powered tunneling transistor for high-performance devices at low voltage

December 12, 2013

scanning electron microscope top view of the TFET A new type of transistor that could make possible, fast and low-powered computing devices for energy-constrained applications such as smart sensor networks, implantable medical electronics and ultra-mobile computing is feasible, according to Penn State University researchers. Called a near broken-gap tunnel field effect transistor, the new device uses the quantum mechanical tunneling of electrons through an ultra-thin energy barrier to provide high current at low voltage. Full Story

Penn State

The National Science Foundation (NSF) is an independent federal agency that supports fundamental research and education across all fields of science and engineering. In fiscal year (FY) 2016, its budget is $7.5 billion. NSF funds reach all 50 states through grants to nearly 2,000 colleges, universities and other institutions. Each year, NSF receives more than 48,000 competitive proposals for funding and makes about 12,000 new funding awards. NSF also awards about $626 million in professional and service contracts yearly.

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