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2D material is used to create hybrid phase-change memristors
A rendering of a 2D material strategically strained to lie precariously between two different crystal phases. Researchers are using the material to create hybrid phase-change memristors, which operate by applying voltage to a thin filament between two electrodes, which offer fast, low-power and high-density computing memory.
[Research supported by U.S. National Science Foundation grants OMA 1936250, ECCS 1942815 and DMR 1719875.]
Learn more in the University of Rochester news story Straining memory leads to new computing possibilities. (Date of image: 2023; date originally posted to NSF Multimedia Gallery: Dec. 20, 2023)
Credit: University of Rochester illustration/Michael Osadciw
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